mixers - double-balanced - chip 4 4 - 42 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc292 v06.1007 general description features functional diagram input ip3: +19 dbm lo / rf isolation: 38 db passive: no dc bias required small size: 1.04 x 0.58 x 0.1 mm electrical specifi cations, t a = +25 c typical applications the hmc292 is ideal for: ? microwave point-to-point radios ? lmds ? satcom the hmc292 chip is a miniature passive gaas mmic double-balanced mixer which can be used as an upconverter or downconverter from 18 - 32 ghz in a small chip area of 0.66 mm 2 . excellent isolations are provided by on-chip baluns, which require no exter- nal components and no dc bias. all data is measured with the chip in a 50 ohm test fi xture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). gaas mmic double-balanced mixer, 18 - 32 ghz parameter lo = +13 dbm lo = +13 dbm units min. typ. max. min. typ. max. frequency range, rf & lo 20 - 30 18 - 32 ghz frequency range, if dc - 8 dc - 8 ghz conversion loss 7.5 9.5 9 11 db noise figure (ssb) 7.5 9.5 9 11 db lo to rf isolation 30 38 30 38 db lo to if isolation 31 40 28 40 db rf to if isolation 20 24 17 24 db ip3 (input) 17 19 15 19 db ip2 (input) 45 50 42 50 dbm 1 db gain compression (input) 8 12 8 12 dbm
mixers - double-balanced - chip 4 4 - 43 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +13 dbm isolation @ lo = +13 dbm conversion gain vs. lo drive rf & lo return loss @ lo = +13 dbm if bandwidth @ lo = +13 dbm upconverter performance conversion gain @ lo = +13 dbm -20 -15 -10 -5 0 15 20 25 30 35 +25 c +85 c -55 c conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 lo rf return loss (db) frequency (ghz) -20 -15 -10 -5 0 0246810 conversion gain (db) retrun loss if conversion gain & return loss (db) if frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 +8 dbm +10 dbm +13 dbm +15 dbm conversion gain (db) frequency (ghz) -50 -40 -30 -20 -10 0 15 20 25 30 35 lo/rf lo/if rf/if isolation (db) frequency (ghz) hmc292 v06.1007 gaas mmic double-balanced mixer, 18 - 32 ghz
mixers - double-balanced - chip 4 4 - 44 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip3 vs. lo drive input ip3 vs. temperature @ lo = +13 dbm input ip2 vs. lo drive input ip2 vs. temperature @ lo = +13 dbm mxn spurious outputs input p1db vs. temperature @ lo = +13 dbm nlo mrf 0 1 2 3 4 0xx11 117039 2707776 3936986 4 >110 >110 >110 rf = 21 ghz @ -10 dbm lo = 22 ghz @ +13 dbm all values in dbc below the if power level. 0 10 20 30 40 50 60 70 80 15 20 25 30 35 -55c +25c +85c ip2 (dbm) frequency (ghz) 5 7 9 11 13 15 15 20 25 30 35 -55c +25c +85c p1db frequency (ghz) 0 10 20 30 40 50 60 70 80 15 20 25 30 35 +8 db, +10 dbm +13 dbm ip2 (dbm) frequency (ghz) 0 5 10 15 20 25 15 20 25 30 35 -55c +25c +85c ip3 (dbm) frequency (ghz) -5 0 5 10 15 20 25 15 20 25 30 35 +8 dbm +10 dbm +13 dbm ip3 (dbm) frequency (ghz) hmc292 v06.1007 gaas mmic double-balanced mixer, 18 - 32 ghz
mixers - double-balanced - chip 4 4 - 45 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings rf / if input +13 dbm lo drive +27 dbm channel temperature 150 c continuous pdiss (t=85 c) (derate 4 mw/c above 85 c) 260 mw thermal resistance (r th ) (junction to die bottom) 250 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. die packaging information [1] standard alternate gp-5 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions hmc292 v06.1007 gaas mmic double-balanced mixer, 18 - 32 ghz
mixers - double-balanced - chip 4 4 - 46 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc292 v06.1007 gaas mmic double-balanced mixer, 18 - 32 ghz pad number function description interface schematic 1lo this pin is dc coupled and matched to 50 ohms. 2rf this pin is dc coupled and matched to 50 ohms. 3if this pin is dc coupled. for applications not requiring operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source/ sink more than 2 ma of current or die non-function and possible die failure will result. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions
mixers - double-balanced - chip 4 4 - 47 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc292 v06.1007 gaas mmic double-balanced mixer, 18 - 32 ghz
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